continental device india limited data sheet page 1 of 3 CMBTA05 cmbta06 silicon epitaxial transistors n?p?n transistor marking CMBTA05 = 1h cmbta06 = 1g absolute maximum ratings cmbt a05 a06 collector?base voltage (open emitter) v cbo max. 60 80 v collector?emitter voltage (open base) v ceo max. 60 80 v emitter?base voltage (open collector) v ebo max. 4 v collector current (d.c.) i c max. 500 ma total power dissipation up to t amb = 25 c p tot max. 250 mw d.c. current gain i c = 100 ma; v ce = 1 v h fe min. 100 transition frequency at f = 100 mhz i c = 10 ma; v ce = 2 v f t min. 100 mhz collector?emitter saturation voltage i c = 100 ma; i b = 10 ma v cesat max. 0.25 v package outline details all dimensions in mm pin configuration 1 = base 2 = emitter 3 = collector 3 2 1 is / iecqc 700000 is / iec q c 750100 is/iso 9002 lic# q sc/l- 000019.2 continental device india limited an is/iso 9002 and iecq certified manufacturer sot-23 formed smd package
continental device india limited data sheet page 2 of 3 ratings (at t a = 25c unless otherwise specified) limiting values collector?base voltage (open emitter) v cbo max. 60 80 v collector?emitter voltage (open base) v ceo max. 60 80 v emitter?base voltage (open collector) v ebo max. 4 v collector current (d.c.) i c max. 500 ma total power dissipation up to t amb = 25 c p tot max. 250 mw storage temperature t stg max. ?55 to +150 c junction temperature tj max. 150 c thermal characteristics t j = p (r th j?t + r th t?s + r th s?a ) + t amb thermal resistance from junction to ambient r th j?a = 500 k/w characteristics (at t a = 25c unless otherwise specified) cmbt a05 a06 collector?emitter breakdown voltage i c = 1 ma; i b = 0 v (br)ceo min. 60 80 v emitter?base breakdown voltage i c = 0; i e = 100 m av (br)ebo min. 4 v collector cut?off current v ce = 60 v; i b = 0 i ceo max. 0.1 m a v cb = 60 v; i e = 0 i cbo max. 0.1 m a v cb = 80 v; i e = 0 i cbo max. 0.1 m a saturation voltages i c = 100 ma; i b = 10 ma v cesat max. 0.25 v base?emitter on voltage i c = 100 ma; v ce = 1 v v be(on) max. 1.2 v d.c. current gain i c = 10 ma; v ce = 1 v h fe min. 100 i c = 100 ma; v ce = 1 v h fe min. 100 transition frequency at f = 100 mhz i c = 10 ma; v ce = 2 v f t min. 100 mhz CMBTA05 cmbta06
continental device india limited data sheet page 3 of 3 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com
|
